Description:N-Channel Silicon MOSFET Features : 1. Low ON-resistance.
Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 250 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 18 A 4. Allowable Power Dissipation : Pd = 2 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C |
Related Part Number |
K2996 | K2985 K2983 | K2959 K2957 | K2956 |