K1923 PDF Datasheet

Description

:

N-Channel Silicon MOSFET

Features :

1. Low ON resistance.

2. Ultrahigh-speed switching.

3. High-speed diode (trr=120ns)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 4 A

4. Allowable Power Dissipation : Pd = 1.75 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

Very High-Speed Switching