Description:N-Channel Silicon MOSFET Features : 1. Low ON resistance. 2. Ultrahigh-speed switching. 3. Low-voltage drive. 4. Its height onboard is 9.5mm. 5. Meets radial taping. Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 30 V 2. Gate to source voltage : VGSS = ± 15 V 3. Drain current : ID = 4.5 V 4. Allowable Power Dissipation : Pd = 1.5 W 5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications 1. Ultrahigh-Speed Switching |
Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |