Description:Silicon N-Channel MOSFET Features : • Low on-resistance Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 450 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 20 A 4. Channel dissipation : Pch = 120 W 5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C |
Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |