Description:N-Channel Silicon MOSFET Features : 1. Low ON-state resistance. Test Circuit Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 60 V 2. Gate to source voltage : VGSS = +- 20 V 3. Drain current : ID = 100 A 4. Drain power dissipation : PD = 3.5 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
Applications : 1. Ultrahigh-Speed Switching |
Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |