Description:N-channel MOSFET Features : 1. High Current 2. Low On-Resistance 3. No Secondary Breakdown 4. Low Driving Power 5. High Forward Transconductance Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 30 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 35 A 4. Max. Power Dissipation : Pd = 60 W 5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications 1. Motor Control 2. General Purpose Power Amplifier 3. DC-DC converters |
Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |