Description:Silicon N-Channel MOSFET Features : • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
1. Drain to source voltage : VDSS = 450 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 12 A 4. Channel dissipation : Pch = 60 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C Application : High speed power switching |
Related Part Number |
K1933 | K1923 K1908 | K1904 K1895 | K1891 |