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Description

1. Low ON-state resistance.

2. Ultrahigh-speed switching.


Test Circuits :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 450 V 

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 0.5 A

4. Channel dissipation : Pd =  30 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High-Frequency General-Purpose Amp 

2. Designed for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.