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Description

NPN Triple Diffused Planar Silicon Transistor

 Image

• High Collector-Base Breakdown Voltage : BVCBO= 1700V

• Low Saturation Voltage : VCE(sat) = 3V (Max.)

• For Color Monitor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1700 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 20 A

5. Total Dissipation : Pc = 200 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

High Voltage Color Display Horizontal Deflection Output