Description:Silicon N Channel MOSFET Features : 1. Low on-resistance 3. High speed switching 4. High Speed Power Switching Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 150 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 70 A 4. Channel dissipation : Pch = 150 W 5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C |
Related Part Number |
H5TC4G83MFR | H5P-SHF-AA H5N1503P | H5DU2562GFR |