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Description

The H11D1, H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Features

• High Voltage
- H11D1, H11D2, BVCER= 300 V
- H11D3, H11D4, BVCER= 200 V

• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute

• Underwriters Laboratory (UL) recognized File# E90700

Applications

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

• Appliance sensor systems

• Industrial controls