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Description

The H11AG series consists of a gallium-aluminmu-arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current.

Features

• High efficiency low degradation liquid epitaxial IRED

• Logic level compatible, input and output currents, with CMOS and LS/TTL

• High DC current transfer ratio at low input currents

Applications : 

•  CMOS driven solid state reliability

• Telephone ring detector

• Digital logic isolation