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HGTG5N120BND
167W 21A 1.2kV NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS

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Description

:

The HGTG5N120BND and HGTP5N120BND, G5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).

HGTG5N120BND TO-247 Package

HGTP5N120BND TO-220AB Package

 

Description

:

The HGTG5N120BND and HGTP5N120BND, G5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).

HGTG5N120BND TO-247 Package

HGTP5N120BND TO-220AB Package

 


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Related Part Number


G5N120BND  |  G5LE-14-ACD  


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