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FGP20N6S2
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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Description

The FGH20N6S2D FGP20N6S2D, FGB20N6S2D, FGP20N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS).

These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:

Features

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits


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Related Part Number


FGPF50N33BT  |  FGPF4633  

FGPF4536  |  FGP20N6S2  

FGH60N60SFD  |  FGG.2B.306.CLAD62  


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