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Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These  MOSFETs feature faster switching and lower gate charge than other  MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low  RDS(ON) and fast switching speed.

Features

1. Critical DC electrical parameters specified at elevated temperature.

2. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

3. High performance trench technology for extremely low RDS(ON).

4. 175°C maximum junction temperature rating.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 80 A

4. Total Power Dissipation : Pd = 68 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -65 to +150 °C