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Description

This N-Channel MOSFET has been designed specifically for switching on the primary side in the
isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 22 A, 150 V. Rds(on)= 80 mΩ@ Vgs= 10V, Rds(on)= 90 mΩ@ Vgs= 6V
• Low gate charge (40nC typical)
• Fast switching speed
• High performance trench technology for extremely low Rds(on)
• 175°C maximum junction temperature rating