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FDN339AN
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ

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Description

: 

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 3 A, 20 V. Rds(on)= 0.035 Ω @ Vgs 4.5 V Rds(on)= 0.050 Ω @ Vgs= 2.5 V.
• Low gate charge (7nC typical).
• High performance trench technology for extremely low Rds(on).
• High power and current handling capability.

 



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