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FDN308P
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.5A, 125mΩ

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Description

: 

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –20 V, –1.5 A. Rds(on)= 125 mΩ@ Vgs= –4.5 V ,  Rds(on)= 190 mΩ@ Vgs= –2.5 V

• Fast switching speed

• High performance trench technology for extremely low Rds(on)

Applications : 

1. Power management

2. Load switch

3. Battery protection



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