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Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage(2.5V – 12V).

Features

•  -20 V, -2.4 A. Rds(on)= 0.055 Ω@ Vgs= –4.5 V, Rds(on)= 0.080 Ω@ Vgs= –2.5 V
• Fast switching speed
• High performance trench technology for extremely low Rds(on)
• SuperSOT -3 provides low Rds(on) and 30% higher power handling capability than SOT23 in the same footprint