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FDG6306P
PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -0.6 A, 420 mΩ

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Description

: 

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage (2.5V – 12V).

Features

1. -0.6 A, -20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V
2. Rds(on)= 630 mΩ@ VGS= –2.5 V
3. Low gate charge
4. High performance trench technology for extremely low Rds(on)
5. Compact industry standard SC70-6 surface mount package

Applications

1. Battery management

2.  Load switch



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