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FDG328P
PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -1.5 A, 145 mΩ

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Description

: 

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).

Features

• -1.5 A, -20 V. Rds(on)= 0.145 Ω@ Vgs= - 4.5 V , Rds(on)= 0.210 Ω@ Vgs= - 2.5 V
• Low gate charge
• High performance trench technology for extremely low Rds(on)
• Compact industry standard SC70-6 surface mount package

Applications :  

• Load switch

• Power management

• DC/DC converter


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