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Description

These dual N-Channel logic level enhancement mode  field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.Thisdevice has been designed especially for low voltage applications as a replacement for digital transistors in load switchingapplications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Features

1. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.

2. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model