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Infineon

IRF7811AVTRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 11 Milliohms; Id 10.8A; SO-8; Pd 2.5W; Vgs +/-20

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Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

Features

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

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F7811AV |

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