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EGP30K
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD
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Description

:

• Glass passivated cavity-free junction

• High surge current capability

• Low leakage current

• Superfast recovery time for high efficiency

• Low forward voltage, high current capability

 

Features

1. Plastic package has Underwriters Laboratory Flammability Classification 94V-0

2. High temperature metallurgically bonded construction

3. Cavity-free glass passivated junction

4. Capable of meeting environmental standards of MIL-S-19500

5. For use in high frequency rectifier circuits

6. Fast switching for high efficiency


Absolute maximum ratings ( Ta=25°C )

1. Peak Repetitive Reverse Voltage : 800 V

2. Maximum RMS Voltage : 560 V

3. Average Rectified Current : Io =3 A

5. Total Device Dissipation : Pd = 6.25 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -65 ~ +150°C



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