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Description

The D649 is a silicon epitaxial - base mesa NPN transist or mounted in JEDEC TO- 3 metal case.

Features : 

1. High Vces breakdown voltage.

2. High collector peak current

3. High reliability

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 1500 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 3 A

5. Total Dissipation : Pc = 3 5W

6. Junction Temperature : Tj = 130°C

7. Storage Temperatue : Tsg = -65 ~ +130°C


Applications :

1. Designed for line-operated horizontal deflection output applications.

Others datasheet of same file : 2SD649