Description:Silicon NPN Epitaxial Transistor Features : • Low frequency power amplifier • Complementary pair with 2SB561
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 25 V 2. Collector to Emitter Voltage : Vceo = 20 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 0.7 A 5. Total Dissipation : Pc = 0.5 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
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Related Part Number |
D467 | D452 |