D2624 PDF Datasheet

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Description

:

NPN Triple Diffused Planar Silicon Transistor

Features :

• High speed.

• High breakdown voltage(VCBO=1500V).

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

• Color TV horizontal deflection output applications,

Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 6 A

5. Total Dissipation : Pc =3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C