Description:NPN Triple Diffused Planar Silicon Transistor
1. High speed. 2. High breakdown voltage (VCBO=1500V). 3. High reliability (Adoption of HVP process). 4. Adoption of MBIT process. 5. On-chip damper diode.
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 1500 V 2. Collector to Emitter Voltage : Vceo = 800 V 3. Emitter to Base Voltage : Vebo = 6 V 4. Collector Current : Ic = 8 A 5. Total Dissipation : Pc = 3 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C Applications : 1. Color TV horizontal deflection output |
Related Part Number |
D2822N | D2822 D2624 | D2583, D2578 | D2394 |