Description:NPN Epitaxial Planar Silicon Darlington Transistor Features : 1. High DC current gain. 2. Large current capacity and wide ASO. 3. Low saturation voltage. 4. Micaless package facilitating mounting. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 110 V 2. Collector to Emitter Voltage : Vceo = 100 V 3. Emitter to Base Voltage : Vebo = 6 V 4. Collector Current : Ic = 5 A 5. Total Dissipation : Pc = 2 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C Applications : 1. Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-votlage regulators |
Related Part Number |
D1D60C18 | D1D36C18 D1878 | D1876 D1829 | D1828 |