D1197 PDF Datasheet

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Description

:

Epitaxial Planar Silicon Darlington Transistor

Features :

1. High DC current gain.

2. Large current capacity and wide ASO.

3. Low saturation voltage.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 110 V

2. Collector to Emitter Voltage : Vceo = 100 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 10 A

5. Total Dissipation : Pc = 70 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.