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Eaton
SD10-470-R
Inductor Power Shielded Drum Core 46.63uH/47uH 20% 100KHz Ferrite 0.337A 1.47Ohm DCR 2020 T/R

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Description

:

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

 

1. High breakdown voltage VCEO = 140 V

2. Typical ft= 20 MHz

3. Fully characterized at 125`C

Application

1. Power supply



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