Description:Silicon Power Transistor
1. Collector to Base Voltage : Vcbo = 100V 2. Collector to Emitter Voltage : Vceo = 100 V 3. Emitter to Base Voltage : Vebo = 7 V 4. Collector Current : Ic = 8 A 5. Total Dissipation : Pc = 50 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C |
Related Part Number |
D1D60C18 | D1D36C18 D1878 | D1876 D1829 | D1828 |