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CLF1G0035-100PU
RF Power Transistor, DC- 3.5 GHz, 100 W, 12.8 dB, 50 V GaN

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Description

:

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.


Features

1. Frequency of operation is from DC to 3.5 GHz.

2. 100 W general purpose broadband RF Power GaN HEMT


Applications

1. Commercial wireless infrastructure (cellular, WiMAX)

2. Industrial, scientific, medical

3. Broadband general purpose amplifier

4. Public mobile radios
 

Official Site : http://www.nxp.com/products/rf/amplifiers/power_transistors/gan_devices/CLF1G0035-100.html



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