PDF C640 Download

Description

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. 
The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current  gain. 
As complementary type the PNP transistor ST 2SA733 is recommended.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 40 V

2. Collector to Emitter Voltage : Vceo = 30 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 100 mA

5. Total Dissipation : Pc = 150 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C