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Description

NPN Epitaxial Planar Silicon Transistor

Features :

1. Small noise figure : NF=2.5dB typ (f=0.9GHz).

2. High power gain : MAG=12dB typ (f=0.9GHz).

3. High cutoff frequency : fT=3.0GHz typ.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 25 V

2. Collector to Emitter Voltage : Vceo = 16 V

3. Emitter to Base Voltage : Vebo = 3 V

4. Collector Current : Ic = 70 mA

5. Total Dissipation : Pc = 250 mW

6. Junction Temperature : Tj = 150°C 

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier