Description:Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 900 V 2. Collector to Emitter Voltage : Vceo = 800 V 3. Emitter to Base Voltage : Vebo = 7 V 4. Collector Current : Ic = 5 A 5. Total Dissipation : Pc = 100 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
Application : Switching Regulator and General Purpose
|
Related Part Number |
C3D03060E | C3996 C3987 | C3896 C3866 | C3858 |