Description:NPN Triple Diffused Planar Silicon Transistor Features : 1. High breakdown voltage and high reliability. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 1100 V 2. Collector to Emitter Voltage : Vceo = 800 V 3. Emitter to Base Voltage : Vebo = 7 V 4. Collector Current : Ic = 12 A 5. Total Dissipation : Pc = 150 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
Switching Regulator |
Related Part Number |
C3D03060E | C3996 C3987 | C3896 C3866 | C3858 |