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Description

NPN Epitaxial Planar Silicon Transistor

Features : 

1. Very small-sized package permitting sets to be small sized, slim.

2. High breakdown voltage : VCEO=(–)50V.

3. Complementary pair transistor having large current capacity and high fT.

4. Adoption of FBET process.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 50 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 500 mA

5. Total Dissipation : Pc = 300 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. High-Speed Switching