Description:Silicon NPN Epitaxial Transistor Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 20 V 2. Collector to Emitter Voltage : Vceo = 12 V 3. Emitter to Base Voltage : Vebo = 3 V 4. Collector Current : Ic = 50 mA 5. Total Dissipation : Pc = 150 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C Description:Silicon NPN Epitaxial Transistor Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 20 V 2. Collector to Emitter Voltage : Vceo = 12 V 3. Emitter to Base Voltage : Vebo = 3 V 4. Collector Current : Ic = 50 mA 5. Total Dissipation : Pc = 150 mW 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C |
Related Part Number |
C3D03060E | C3996 C3987 | C3896 C3866 | C3858 |