Description:NPN Epitaxial Planar Silicon Transistor Features : 1. High DC current gain(hfe = 800 to 3200) 2. Large Current capacity(Ic = 1.2A) Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 30 V 2. Collector to Emitter Voltage : Vceo = 25 V 3. Emitter to Base Voltage : Vebo = 15 V 4. Collector Current : Ic = 1.2 A 5. Total Dissipation : Pc = 1 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
Applications 1. Low-frequency, general-purpose amplifier 2. Various drivers, muting circuit |
Related Part Number |
C3D03060E | C3996 C3987 | C3896 C3866 | C3858 |