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Siemens

BUZ90A

Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Description

• N channel

• Enhancement mode

• Avalanche-rated

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ±20 V

3. Drain current : ID = 4 A

4. Power Dissipation : Pd = 75 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Please enter the part number.

BUZ93  |  BUZ91AF

BUZ91A  |  BUZ90A

BUZ81  |  BUZ78

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