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Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Features

• 14A, 50V
• rDS(ON)= 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
• TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 50 V

2. Gate to source voltage : VGSS = ± 20 A

3. Drain current : ID = 14 A

4. Maximum Power Dissipation : Pd = 40 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C