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NXP Semiconductors
BUK9506-55B
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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Description

:

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features : 

1. Low conduction losses due to low on-state resistance

2. Q101 compliant

3. Suitable for logic level gate drive sources

4. Suitable for thermally demanding environments due to 175 °C rating

 

Applications :

1. Automotive systems

2. 12 V and 24 V loads

3. Motors, lamps and solenoids

4. General purpose power switching.



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