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STMicroelectronics

BUH515D

Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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Description

:

Silicon NPN Power Transistor

Features :

1. With TO-3PML package

2. High voltage

3. High speed switching

4. Built-in damper diode

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1500 V

2. Collector to Emitter Voltage : Vceo = 700 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

Please enter the part number.

BUZ93  |  BUZ91AF

BUZ91A  |  BUZ90A

BUZ81  |  BUZ78

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