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BSS149
Small Signal Field-Effect Transistor, 0.35A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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Description

:

1. Vds = 200V

2. Id = 0.35A , Rds(on) = 3.5 Ohm

3. N channel

4. Depletion mode

5. High dynamic resistance

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 200 V

2. Gate to source voltage : VGSS = ± 14 V

3. Drain current : ID = 0.35 A

4. Power Dissipation : Pd = 1 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C



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