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BSR18A

Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30

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Description

This device is designed as a general-purpose ampli-fier for switching applications at collector currents of10 μA to 100 mA. Sourced from process 66.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 40 V

2. Collector to Emitter Voltage : Vceo = - 40 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 200 mA

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -55 ~ +150°C

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