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NXP Semiconductors
BFQ17
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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Description

:

NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 40 V

2. Collector to Emitter Voltage : Vceo = 25 V

3. Collector Current : Ic = 300 mA

4. Total Dissipation : Pc = 1 W

 



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