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NXP Semiconductors
BDX35
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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Description

:

Silicon NPN Power Transistor

Features : 

1. With TO-126 package
2. High current (Max: 5A)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 100 V

2. Collector to Emitter Voltage : Vceo = 60 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 15 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

 

Applications : 

1. High current switching in power  applications.


Description

:

Silicon NPN Power Transistor

Features : 

1. With TO-126 package
2. High current (Max: 5A)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 100 V

2. Collector to Emitter Voltage : Vceo = 60 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 15 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C

 

Applications : 

1. High current switching in power  applications.



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Related Part Number


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BDX93  |  BDX54C  

BDX54A  |  BDX54  


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