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BDW23ATU
Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Worldway Electronics9,6000.22260.2184Visit Site
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Lingto Electronic Ltd.40,060Visit Site
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Description

:

NPN Epitaxial Silicon Transistor

Features : 

• Power Darlington TR

• Complement to BDW24, BDW24A, BDW24B and BDW24C respectively

• Hammer Drivers, Audio Amplifiers

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 45 V

2. Collector to Emitter Voltage : Vceo = 45 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 6 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C



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Related Part Number


BDY55  |  BDY53  

BDX93  |  BDX54C  

BDX54A  |  BDX54  


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