Description:NPN Epitaxial Silicon Transistor Features : • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = 45 V 2. Collector to Emitter Voltage : Vceo = 45 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 6 A 5. Total Dissipation : Pc = 50 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C |
Related Part Number |
BDY55 | BDY53 BDX93 | BDX54C BDX54A | BDX54 |