BD699 PDF Datasheet

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Description

8.0 Ampere Darlington Power Transistor NPN Silicon Transistor.

Features :

1. High DC Current Gain -

hFE = 750(Min) @ Ic = 3.0 and 4.0 Adc

2. Monolithic Construction.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 80 V

2. Collector to Emitter Voltage : Vceo = 80 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 70 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C